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2N5929 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer 2N5929
Bauteilbeschribung  isc Silicon NPN Power Transistors
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
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2N5929 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistors
2N5929
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 50mA ; IB= 0
80
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 15A; IB= 1.5A
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 30A; IB= 7.5A
4.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 30A; IB= 7.5A
2.5
V
VBE(on)
Base-Emitter On Voltage
IC= 10A ; VCE= 4V
1.5
V
ICEO
Collector Cutoff Current
VCE= 80V; IB= 0
2.0
mA
ICBO
Collector Cutoff Current
VCB= 90V; IE= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 10A ; VCE= 4V
20
100
hFE-2
DC Current Gain
IC= 30A ; VCE= 4V
4
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 10V ;ftest= 1MHz
30
MHz


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