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2SA1225 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer 2SA1225
Bauteilbeschribung  isc Silicon PNP Power Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
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2SA1225 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon PNP Power Transistor
2SA1225
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNI
T
V(BR)EBO
Emitter-Base Breakdown Voltage
IE=-1mA,IC=0
-5
V
V (BR)CEONOTE
Collector-Emitter Breakdown Voltage
IC=-10mA, IB=0
-160
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC=-1mA ,IE=0
-160
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -0.5A; IB= -50mA
-1.5
V
VBE(on)
Base-Emitter Voltage
VCE=-5V, IC=-0.5A
-1.0
V
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
-0.1
μ
A
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-0.1
μ
A
hFE
DC Current Gain
IC= -0.1A; VCE= -5V
70
240
fT
Transition frequency
VCE=-10V ,IC=-100mA
100
MHz
Cob
Collector output capacitance
VCB=-10V ,IE=0,f=1MHz
30
pF
NOTE:Pulse test
hFE Classifications
O
Y
70-140
120-240


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