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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BC847PN Datenblatt(PDF) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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BC847PN Datenblatt(HTML) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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2 / 2 page  Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Electrical Characteristics NPN BC847B Section @ TA = 25°C unless otherwise specified Notes: 2. Short duration pulse test used to minimize self-heating effect. Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 2) V(BR)CBO 50 — — V IC = 10 mA, IB = 0 Collector-Emitter Breakdown Voltage (Note 2) V(BR)CEO 45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 2) V(BR)EBO 6— — V IE = 1 mA, IC = 0 DC Current Gain (Note 2) hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) — 90 200 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 2) VBE(SAT) — 700 900 —mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 2) VBE(ON) 580 — 660 — 700 720 mV VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA Collector-Cutoff Current (Note 2) ICBO ICBO — — — — 15 5.0 nA µA VCB = 30V VCB = 30V, TA = 150°C Gain Bandwidth Product fT 100 300 — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Collector-Base Capacitance CCBO — 3.5 6.0 pF VCB = 10V, f = 1.0MHz Noise Figure NF — 2.0 10 dB VCE = 5V, IC = 200µA, RG = 2.0k W, f = 1.0kHz, Df = 200Hz Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 2) V(BR)CBO -50 — — V IC = 10 mA, IB = 0 Collector-Emitter Breakdown Voltage (Note 2) V(BR)CEO -45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 2) V(BR)EBO -5 — — V IE = 1 mA, IC = 0 DC Current Gain (Note 2) hFE 220 290 475 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) — -75 -250 -300 -650 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 2) VBE(SAT) — -700 -850 — -950 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 2) VBE(ON) -600 — -650 — -750 -820 mV VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA Collector-Cutoff Current (Note 2) ICBO ICBO — — — — -15 -4.0 nA µA VCB = 30V VCB = 30V, TA = 150°C Gain Bandwidth Product fT 100 200 — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Collector-Base Capacitance CCBO — 3 4.5 pF VCB = 10V, f = 1.0MHz Noise Figure NF — — 10 dB VCE = 5V, IC = 200µA, RG = 2.0k W, f = 1.0kHz, Df = 200Hz Electrical Characteristics PNP BC857B Section @ TA = 25°C unless otherwise specified |
Ähnliche Teilenummer - BC847PN |
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Ähnliche Beschreibung - BC847PN |
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