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SI4812DY-T1-E3 Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI4812DY-T1-E3 Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si4812DY Vishay Siliconix www.vishay.com 4 Document Number: 71775 S-41426—Rev. G, 26-Jul-04 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 20 30 40 50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (MOSFET) Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET) Square Wave Pulse Duration (sec) VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Time (sec) 0.00 0.02 0.04 0.06 0.08 0.10 0 2468 10 2 1 0.1 0.01 10−4 10−3 10−2 10−1 10 100 600 TJ = 150_C TJ = 25_C ID = 9.0 A 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 72_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 50 1 0.1 10 600 100 10 1 0.1 0.01 1 125 150 0.0001 1 20 Reverse Current (Schottky) TJ − Junction Temperature (_C) 0 255075 100 10 V 0.001 0.01 0.1 10 20 V 30 V |
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