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TC55V040AFT-55 Datenblatt(PDF) 5 Page - Toshiba Semiconductor

Teilenummer TC55V040AFT-55
Bauteilbeschribung  524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC55V040AFT-55 Datenblatt(HTML) 5 Page - Toshiba Semiconductor

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TC55V040AFT-55,-70
2003-08-06
5/11
AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta
= −40° to 85°C, VDD = 2.3 to 3.6 V)
READ CYCLE
TC55V040AFT
-55
-70
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
tRC
Read Cycle Time
70
85
tACC
Address Access Time
70
85
tCO1
Chip Enable(
1
CE ) Access Time
70
85
tCO2
Chip Enable(CE2) Access Time
70
85
tOE
Output Enable Access Time
35
45
tCOE
Chip Enable Low to Output Active
5
5
tOEE
Output Enable Low to Output Active
0
0
tOD
Chip Enable High to Output High-Z
30
35
tODO
Output Enable High to Output High-Z
30
35
tOH
Output Data Hold Time
10
10
ns
WRITE CYCLE
TC55V040AFT
-55
-70
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
tWC
Write Cycle Time
70
85
tWP
Write Pulse Width
50
55
tCW
Chip Enable to End of Write
60
70
tAS
Address Setup Time
0
0
tWR
Write Recovery Time
0
0
tODW
R/W Low to Output High-Z
30
35
tOEW
R/W High to Output Active
0
0
tDS
Data Setup Time
30
35
tDH
Data Hold Time
0
0
ns
AC TEST CONDITIONS
PARAMETER
TEST CONDITION
Output load
30 pF
+ 1 TTL Gate
Input pulse level
VDD − 0.2 V, 0.2 V
Timing measurements
VDD × 0.5
Reference level
VDD × 0.5
tR, tF
5 ns


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