Datenblatt-Suchmaschine für elektronische Bauteile |
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LB1861-E Datenblatt(PDF) 2 Page - ON Semiconductor |
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LB1861-E Datenblatt(HTML) 2 Page - ON Semiconductor |
2 / 8 page Specifications Absolute Maximum Ratings at Ta=25 °C, ( ): LB1860M, LB1861M Parameter Symbol Conditions Ratings Unit Maximum input current ICC max t % 20 ms 200 mA Output supply voltage VOUT Internal V Output current IOUT 1.5 A RD flow-in current IRD 10 mA RD supply voltage VRD 50 V Allowable power dissipation Pd1 max 1.1 W Pd2 max Mounted on 20 × 15 × 1.5 mm glass epoxy board (0.8) W Operating temperature Topr –30 to +80 °C Storage temperature Tstg –55 to +125 °C Allowable Operating Ranges at Ta=25 °C Parameter Symbol Conditions Ratings Unit Input current range ICC 6.0 to 50 mA Common-mode input voltage range VICM 0toVIN –1.5 V Electrical Characteristics at Ta=25 °C, ICC =10mA Parameter Symbol Conditions min typ max Unit Output limiting voltage VOLM1 LB1860, 1860M: IO = 0.1 A 54 57 60 V LB1861, 1861M: IO = 0.1 A 30 32 34 V Output saturation voltage VO sat1 IO = 0.5 A 0.95 1.2 V VO sat2 IO = 1.0 A 1.15 1.5 V VO sat3 IO = 1.5 A 1.4 2.0 V Input voltage VIN ICC = 7.0 mA 6.4 6.7 7.0 V Amp input offset voltage VOFF –7.0 0 7.0 mV Amp input bias current IBA –250 nA RD output saturation voltage VRD (sat) IRD = 5 mA 0.15 0.3 V C flow-out current IC1 C = GND 2.7 3.9 5.0 µA C discharge current IC2 C=VIN 0.35 0.50 0.65 µA Comparator input threshold voltage VTH1 0.77 0.8 VIN 0.83 V VTH2 0.44 0.47 VIN 0.50 V Ct discharge voltage Vct 0.18 0.2 VIN 0.22 V Rt input current IRT VRT = GND –440 –350 –240 µA Rt comparator voltage VRT RT = OPEN 0.59 0.62 VIN 0.65 V Thermal protection circuit operating voltage TSD Design target 180 °C Thermal protection circuit hysteresis ∆TSD Design target 40 °C Pin Assignments Top view Top view LB1860,1860M,1861,1861M No. 2 |
Ähnliche Teilenummer - LB1861-E |
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Ähnliche Beschreibung - LB1861-E |
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