74AUP2G86

Document number: DS36143 Rev. 1 - 2

5 of 9

www.diodes.com

January 2015

© Diodes Incorporated

74AUP2G86

Symbol

Parameter

Test Conditions

Unit

Min

Max

High-Level Input Voltage

—

0.8V to 1.65V

—

V

—

1.65V to 1.95V

—

—

2.3V to 2.7V

1.6

—

—

3.0V to 3.6V

2.0

—

Low-Level Input Voltage

—

0.8V to 1.65V

—

V

—

1.65V to 1.95V

—

—

2.3V to 2.7V

—

0.7

—

3.0V to 3.6V

—

0.9

High-Level Output Voltage

0.8V to 3.6V

—

V

1.1V

—

1.4V

0.93

—

1.65V

1.17

—

2.3V

1.77

—

1.67

—

3V

2.40

—

2.30

—

Low-Level Input Voltage

0.8V to 3.6V

—

0.11

V

1.1V

—

1.4V

—

0.41

1.65V

—

0.39

2.3V

—

0.36

—

0.50

3V

—

0.36

—

0.50

Input Current

0V to 3.6V

—

± 0.75

μA

Power Down Leakage Current

0V

—

± 1.0

μA

Delta Power Down Leakage Current

0V to 0.2V

—

± 2.5

μA

Supply Current

0.8V to 3.6V

—

3.0

μA

Additional Supply Current

3.3V

—

75

μA

Parameter

Test

Conditions

Typ

Unit

Power Dissipation

Capacitance

f = 1MHz

No Load

0.8V

5.1

pF

1.2V ± 0.1V

5.2

1.5V ± 0.1V

5.2

1.8V ± 0.15V

5.5

2.5V ± 0.2V

5.7

3.3V ± 0.3V

6.0

Input Capacitance

0V or 3.3V

2.0

pF

Thermal Resistance

Junction-to-Ambient

X2-DFN1210-8

(Note 9)

—

+395

°

C/W

Thermal Resistance

Junction-to-Case

X2-DFN1210-8

(Note 9)

—

+236

°

C/W

Note:

9. Test condition, X2-DFN1210-8 device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.