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BF1205 Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BF1205 Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 24 page 2003 Sep 30 3 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1205 QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Ts is the temperature at the soldering point of the source lead. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET; unless otherwise specified VDS drain-source voltage −− 10 V ID drain current (DC) −− 30 mA Ptot total power dissipation Ts ≤ 102 °C; temperature at the soldering point of the source lead −− 200 mW yfs forward transfer admittance ID = 12 mA 263140 mS Cig1-ss input capacitance at gate 1 amp. a: f = 1 MHz − 1.8 2.3 pF amp. b: f = 1 MHz − 2.0 2.5 pF Crss reverse transfer capacitance f = 1 MHz − 20 − fF NF noise figure amp. a: f = 800 MHz − 1.2 1.9 dB amp. b: f = 800 MHz − 1.4 2.1 dB Xmod cross-modulation amp. a: input level for k = 1% at 40 dB AGC 98 102 − dB µV amp. b: input level for k = 1% at 40 dB AGC 100 105 − dB µV Tj junction temperature −− 150 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per MOS-FET; unless otherwise specified VDS drain-source voltage − 10 V ID drain current (DC) − 30 mA IG1 gate 1 current −±10 mA IG2 gate 2 current −±10 mA Ptot total power dissipation Ts ≤ 102 °C; note − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 240 K/W |
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