2003 Sep 30

3

Philips Semiconductors

Product specification

Dual N-channel dual gate MOS-FET

BF1205

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX.

UNIT

Per MOS-FET; unless otherwise specified

drain-source voltage

−−

10

V

drain current (DC)

−−

30

mA

total power dissipation

soldering point of the source lead

−−

200

mW

forward transfer admittance

263140

mS

input capacitance at gate 1

amp. a: f = 1 MHz

−

1.8

2.3

pF

amp. b: f = 1 MHz

−

2.0

2.5

pF

reverse transfer capacitance

f = 1 MHz

−

20

−

fF

NF

noise figure

amp. a: f = 800 MHz

−

1.2

1.9

dB

amp. b: f = 800 MHz

−

1.4

2.1

dB

cross-modulation

amp. a: input level for k = 1% at

40 dB AGC

98

102

−

dB

µV

amp. b: input level for k = 1% at

40 dB AGC

100

105

−

dB

µV

junction temperature

−−

150

°C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per MOS-FET; unless otherwise specified

drain-source voltage

−

10

V

drain current (DC)

−

30

mA

gate 1 current

−±10

mA

gate 2 current

−±10

mA

total power dissipation

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to soldering point

240

K/W