BF1205C datasheet(5/22 Pages) PHILIPS

Teilenummer	BF1205C

Bauteilbeschribung	Dual N-channel dual gate MOS-FET

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Hersteller	PHILIPS [NXP Semiconductors]

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9397 750 13005

Product data sheet

Rev. 01 — 18 May 2004

5 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

8.

Dynamic characteristics

8.1 Dynamic characteristics for ampliﬁer a

(1) ID(b); RG1 = 120 kΩ.

(2) ID(b); RG1 = 150 kΩ.

(3) ID(b); RG1 = 180 kΩ.

(4) ID(a); RG1 = 180 kΩ.

(5) ID(a); RG1 = 150 kΩ.

(6) ID(a); RG1 = 120 kΩ.

VGG = 5 V: ampliﬁer a is off; ampliﬁer b is on

VGG = 0 V: ampliﬁer a is on; ampliﬁer b is off.

Fig 2.

Drain currents of MOS-FET a and b as function

of VGG.

Fig 3.

Functional diagram.

001aaa552

8

12

4

16

20

ID

(mA)

0

VGG (V)

05

4

23

1

(2)

(5)

(4)

(6)

(3)

(1)

001aaa553

RG1

VGG

g1 (b)

g2

g1 (a)

d (b)

s

d (a)

Table 8:

Dynamic characteristics for ampliﬁer a [1]

Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 19 mA.

Symbol

Parameter

Conditions

Min

Typ Max

Unit

yfs

forward transfer admittance

Tj =25 °C26

31

41

mS

Cig1-ss

input capacitance at gate 1

f = 1 MHz

-

2.2

2.7

pF

Cig2-ss

input capacitance at gate 2

f = 1 MHz

-

3.0

-

pF

Coss

output capacitance

f = 1 MHz

-

0.9

-

pF

Crss

reverse transfer capacitance

f = 1 MHz

-

20

-

fF

Gtr

power gain

BS =BS(opt); BL =BL(opt)

f = 200 MHz; GS = 2 mS; GL = 0.5 mS

31

35

39

dB

f = 400 MHz; GS = 2 mS; GL = 1 mS

26

30

34

dB

f = 800 MHz; GS = 3.3 mS; GL =1mS

21

25

29

dB

NF

noise ﬁgure

f = 11 MHz; GS = 20 mS; BS = 0 S

-

3.0

-

dB

f = 400 MHz; YS =YS(opt)

-

1.3

1.9

dB

f = 800 MHz; YS =YS(opt)

-

1.4

2.1

dB

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