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CSD17581Q3AT Datenblatt(PDF) 6 Page - Texas Instruments

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Teilenummer CSD17581Q3AT
Bauteilbeschribung  30-V N-Channel NexFET Power MOSFETs
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Hersteller  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

CSD17581Q3AT Datenblatt(HTML) 6 Page - Texas Instruments

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TC - Case Temperature (°C)
-50
-25
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
D012
VDS - Drain-to-Source Voltage (V)
0.1
1
10
100
0.1
1
10
100
1000
D010
DC
10 ms
1 ms
100 µs
10 µs
TAV - Time in Avalanche (ms)
0.01
0.1
1
1
10
100
D011
TC = 25q C
TC = 125q C
VSD - Source-to-Drain Voltage (V)
0
0.2
0.4
0.6
0.8
1
0.0001
0.001
0.01
0.1
1
10
100
D009
TC = 25°C
TC = 125°C
TC - Case Temperature (°C)
-75
-50
-25
0
25
50
75
100
125
150
175
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
D008
VGS = 4.5 V
VGS = 10 V
6
CSD17581Q3A
SLPS629 – OCTOBER 2016
www.ti.com
Product Folder Links: CSD17581Q3A
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
ID = 16 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
Single pulse, max RθJC = 2°C/W
Figure 10. Maximum Safe Operating Area (SOA)
Figure 11. Single Pulse Unclamped Inductive Switching
Figure 12. Maximum Drain Current vs Temperature


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