STK5Q4U352J-E

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6

7.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Power output section

Collector-emitter leakage current

VCE = 600 V

ICE

-

-

100

μA

Collector to emitter saturation voltage

Ic = 8 A, Tj = 25

C

VCE(sat)

1.8

2.6

V

Ic = 4 A, Tj = 100

C

1.5

V

Diode forward voltage

IF = 8 A, Tj = 25

C

VF

1.4

2.1

V

IF = 4 A, Tj = 100

C

1.1

V

Junction to case thermal resistance

IGBT

θj-c(T)

-

-

4

C/W

Freewheeling Diode

θj-c(T)

-

-

5.5

C/W

Switching time

Ic = 8 A, VCC = 300 V, Tj = 25C

-

0.6

1.3

μs

-

1.0

1.6

Turn-on switching loss

Ic = 8 A, VCC = 300 V, Tj = 25C

-

250

-

μJ

Turn-off switching loss

-

80

-

μJ

Total switching loss

-

330

-

μJ

Turn-on switching loss

Ic = 8 A, VCC = 300 V, Tj = 25C

-

300

-

μJ

Turn-off switching loss

-

100

-

μJ

Total switching loss

-

400

-

μJ

Diode reverse recovery energy

Ic = 8 A, VCC = 300 V, Tj = 25C

(di/dt set by internal driver)

-

50

-

μJ

Diode reverse recovery time

trr

-

150

-

ns

Reverse bias safe operating area

Ic = 16 A, VCE = 450 V

RBSOA

Full

Square

-

Short circuit safe operating area

VCE = 400 V

SCSOA

4

-

-

μs

Allowable offset voltage slew rate

U to NU, V to NV, W to NW

dv/dt

50

-

50

V/ns

Driver Section

Gate driver consumption current

VBS = 15 V (Note 4), per driver

ID

-

0.07

0.4

mA

VDD = 15 V, total

ID

-

0.95

3

mA

High level Input voltage

HINU, HINV, HINW, LINU, LINV, LINW

to GND

Vin H

2.5

-

-

V

Low level Input voltage

Vin L

-

-

0.8

V

Logic 1 input current

VIN = +3.3 V

-

660

900

μA

Logic 0 input current

VIN = 0 V

-

-

3

μA

Bootstrap ON Resistance

IB = 1 mA

RB

-

110

-

Ω

FAULT terminal sink current

FAULT : ON / VFAULT = 0.1 V

IoSD

-

2

-

mA

FAULT clearance delay time

RCLR = 2 MΩ, CCLR = 1 nF

FLTCLR

1.1

1.65

2.2

ms

ENABLE ON/OFF voltage

VEN ON-state voltage

VEN(ON)

2.5

-

-

V

VEN OFF-state voltage

VEN(OFF)

-

-

0.8

V

ITRIP threshold voltage

ITRIP to GND

VITRIP

0.44

0.49

0.54

V

ITRIP to shutdown propagation delay

-

1.1

-

μs

ITRIP blanking time

250

350

-

ns

VDD and VBS supply undervoltage

positive going input threshold

10.2

11.1

11.8

V

VDD and VBS supply undervoltage

negative going input threshold

10.0

10.9

11.6

V

hysteresis

-

0.2

-

V