Datenblatt-Suchmaschine für elektronische Bauteile |
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FM24CL16-G Datenblatt(PDF) 8 Page - List of Unclassifed Manufacturers |
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FM24CL16-G Datenblatt(HTML) 8 Page - List of Unclassifed Manufacturers |
8 / 13 page FM24CL16 Rev 2.2 July 2003 Page 8 of 13 3. High noise environments. Writing to EEPROM in a noisy environment can be challenging. When severe noise or power fluctuations are present, the long write time of EEPROM creates a window of vulnerability during which the write can be corrupted. The fast write of FRAM is complete within a microsecond. This time is typically too short for noise or power fluctuation to disturb it. 4. Time to market. In a complex system, multiple software routines may need to access the nonvolatile memory. In this environment the time delay associated with programming EEPROM adds undue complexity to the software development. Each software routine must wait for complete programming before allowing access to the next routine. When time to market is critical, FRAM can eliminate this simple obstacle. As soon as a write is issued to the FM24CL16, it is effectively done -- no waiting. 5. RF/ID. In the area of contactless memory, FRAM provides an ideal solution. Since RF/ID memory is powered by an RF field, the long programming time and high current consumption needed to write EEPROM is unattractive. FRAM provides a superior solution. The FM24CL16 is suitable for multi-chip RF/ID products. 6. Maintenance tracking. In sophisticated systems, the operating history and system state during a failure is important knowledge. Maintenance can be expedited when this information has been recorded. Due to the high write endurance, FRAM makes an ideal system log. In addition, the convenient 2-wire interface of the FM24CL16 allows memory to be distributed throughout the system using minimal additional resources. |
Ähnliche Teilenummer - FM24CL16-G |
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Ähnliche Beschreibung - FM24CL16-G |
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