©2003 Fairchild Semiconductor Corporation

Rev. A. February 2003

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

* Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2.0%

* Device mounted on FR-4 PCB 1.6”

× 0.06"

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

25

V

Collector-Base Voltage

40

V

Emitter-Base Voltage

4.0

V

Collector current

- Continuous

200

mA

Junction and Storage Temperature

-55 ~ +150

°C

Symbol

Parameter

Test Condition

Min.

Max.

Units

Off Characteristics

Collector-Emitter Breakdown Voltage

25

V

Collector-Base Breakdown Voltage

40

V

Emitter-Base Breakdown Voltage

4.0

V

Collector Cutoff Current

50

nA

Collector Cutoff Current

µA

On Characteristics *

DC Current Gain

250

150

500

Collector-Emitter Saturation Voltage

0.5

V

Small Signal Characteristics

Output Capacitance

3.5

pF

Symbol

Parameter

Max.

Units

MPS6515

*MMBT6515

Total Device Dissipation

Derate above 25

°C

625

5.0

350

2.8

mW

mW/

°C

Thermal Resistance, Junction to Case

83.3

°C/W

Thermal Resistance, Junction to Ambient

200

357

°C/W

MPS6515/MMBT6515

NPN General Purpose Amplifier

• This device is designed as a general purpose

amplifier and switch.

• The useful dynamic range extends to 100mA as a

switch and to 100MHz as an amplifier.

SOT-23

1. Base 2. Emitter 3. Collector

1

2

3

Mark: 3J

TO-92

1

1. Emitter 2. Base 3. Collector