Datenblatt-Suchmaschine für elektronische Bauteile |
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SI4848DY-T1 Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI4848DY-T1 Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si4848DY Vishay Siliconix www.vishay.com 2 Document Number: 71356 S-03950—Rev. B, 26-May-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 120 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 120 V, VGS = 0 V, TJ = 55_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 25 A Drain Source On State Resistancea rDS( ) VGS = 10 V, ID = 3.5 A 0.068 0.085 W Drain-Source On-State Resistancea rDS(on) VGS = 6.0 V, ID = 3.0 A 0.076 0.095 W Forward Transconductancea gfs VDS = 15 V, ID = 5 A 15 S Diode Forward Voltagea VSD IS = 2.5 A, VGS = 0 V 0.75 1.2 V Dynamicb Total Gate Charge Qg 17 21 Gate-Source Charge Qgs VDS = 75 V, VGS = 10 V, ID = 3.5 A 3.2 nC Gate-Drain Charge Qgd 6.0 Gate Resistance Rg 0.5 0.85 1.8 W Turn-On Delay Time td(on) 9.0 14 Rise Time tr VDD = 75 V, RL = 21 W 10 15 Turn-Off Delay Time td(off) VDD = 75 V, RL = 21 W ID ^ 3.5 A, VGEN = 10 V, RG = 6 W 24 35 ns Fall Time tf 17 25 Source-Drain Reverse Recovery Time trr IF = 2.5 A, di/dt = 100 A/ms 45 70 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 5 10 15 20 25 0123456 0 5 10 15 20 25 02468 10 VGS = 10 thru 6 V TC = 125_C -55 _C 25 _C Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 5 V 3, 4 V |
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