Datenblatt-Suchmaschine für elektronische Bauteile |
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SI8401DB-T1 Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SI8401DB-T1 Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 5 page FEATURES D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area D Pin Compatible to Industry Standard Si3443DV APPLICATIONS D PA, Battery and Load Switch D Battery Charger Switch D PA Switch Si8401DB Vishay Siliconix Document Number: 71674 S-40384—Rev. F, 01-Mar-04 www.vishay.com 1 P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) −20 0.065 @ VGS = −4.5 V −4.9 −20 0.095 @ VGS = −2.5 V −4.1 MICRO FOOT S G D P-Channel MOSFET 32 41 S DD G Bump Side View Backside View Device Marking: 8401 xxx = Date/Lot Traceability Code 8401 xxx Ordering Information: Si8401DB-T1 Si8401DB-T1—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS −20 V Gate-Source Voltage VGS "12 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID −4.9 −3.6 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID −3.9 −2.8 A Pulsed Drain Current IDM −10 A continuous Source Current (Diode Conduction)a IS −2.5 −2.5 Maximum Power Dissipationa TA = 25_C PD 2.77 1.47 W Maximum Power Dissipationa TA = 70_C PD 1.77 0.94 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C Package Reflow Conditionsb VPR 215/245c _C Package Reflow Conditionsb IR/Convection 220/250c _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 5 sec R 35 45 Maximum Junction-to-Ambienta Steady State RthJA 72 85 _C/W Maximum Junction-to-Foot (drain) Steady State RthJF 16 20 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering. c. Package reflow conditions for lead-free. |
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