Datenblatt-Suchmaschine für elektronische Bauteile |
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LM335AZ Datenblatt(PDF) 4 Page - National Semiconductor (TI) |
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LM335AZ Datenblatt(HTML) 4 Page - National Semiconductor (TI) |
4 / 14 page Electrical Characteristics (Note 1) (Continued) Note 1: Accuracy measurements are made in a well-stirred oil bath. For other conditions, self heating must be considered. Note 2: Continuous operation at these temperatures for 10,000 hours for H package and 5,000 hours for Z package may decrease life expectancy of the device. Note 3: Thermal Resistance TO-92 TO-46 SO-8 θ JA (junction to ambient) 202˚C/W 400˚C/W 165˚C/W θ JC (junction to case) 170˚C/W N/A N/A Note 4: Refer to RETS135H for military specifications. Typical Performance Characteristics Reverse Voltage Change DS005698-27 Calibrated Error DS005698-28 Reverse Characteristics DS005698-29 Response Time DS005698-30 Dynamic Impedance DS005698-31 Noise Voltage DS005698-32 Thermal Resistance Junction to Air DS005698-33 Thermal Time Constant DS005698-34 Thermal Response in Still Air DS005698-35 www.national.com 4 |
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