Datenblatt-Suchmaschine für elektronische Bauteile |
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KTB2510 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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KTB2510 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Darlington Power Transistor KTB2510 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 -150 V VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -7mA -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -7A; IB= -7mA -3 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -100 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2 mA hFE DC Current Gain IC= -7A ; VCE= -4V 5000 fT Current-Gain—Bandwidth Product IC= -2A; VCE= -12V 50 MHz COB Output Capacitance IE= 0; VCB= -10V;ftest= 1MHz 230 pF |
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