BC847BDW1T1G datasheet(5/6 Pages) ONSEMI

Teilenummer	BC847BDW1T1G

Bauteilbeschribung	Dual General Purpose Transistors

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BC846BDW1T1, BC847BDW1T1, BC848CDW1T1

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5

Figure 13. Thermal Response

t, TIME (ms)

1.0

0

0.1

0.01

0.001

10

100

1.0k

10k

100k

Figure 14. Active Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (V)

−200

−1.0

TA = 25°C

D = 0.5

0.2

0.1

0.05

SINGLE PULSE

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

3 ms

TJ = 25°C

ZqJA(t) = r(t) RqJA

RqJA = 328°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RqJC(t)

t1

t2

P(pk)

DUTY CYCLE, D = t1/t2

−100

−50

−10

−5.0

−2.0

−5.0

−10

−30 −45 −65 −100

1 s

BC558

BC557

BC556

The safe operating area curves indicate IC−VCE limits

of the transistor that must be observed for reliable

operation. Collector load lines for specific circuits must

fall below the limits indicated by the applicable curve.

The data of Figure 14 is based upon TJ(pk) = 150°C; TC

or TA is variable depending upon conditions. Pulse

curves are valid for duty cycles to 10% provided TJ(pk) ≤

150

°C. TJ(pk) may be calculated from the data in

Figure 13. At high case or ambient temperatures,

thermal limitations will reduce the power that can be

handled to values less than the limitations imposed by the

secondary breakdown.

1.0M

0.02

0.01

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