BF1211R datasheet(9/15 Pages) PHILIPS

Teilenummer	BF1211R

Bauteilbeschribung	N-channel dual-gate MOS-FETs

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Hersteller	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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9 / 15 page

2003 Dec 16

9

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate MOS-FETs

BF1211; BF1211R; BF1211WR

handbook, halfpage

102

10

1

10−1

MDB841

10

102

103

yis

(mS)

f (MHz)

gis

bis

Fig.17 Input admittance as a function of frequency;

typical values.

VDS = 5 V; VG2 =4V.

ID = 15 mA; Tamb =25 °C.

handbook, halfpage

MDB842

10

102

103

102

10

1

|yrs|

(

µS)

f (MHz)

−103

−102

−10

−1

ϕrs

(deg)

|yrs|

ϕrs

Fig.18 Reverse transfer admittance and phase as

a function of frequency; typical values.

VDS = 5 V; VG2 =4V.

ID = 15 mA; Tamb =25 °C.

handbook, halfpage

102

10

1

MDB843

10

f (MHz)

102

103

|yfs|

(mS)

−102

−10

−1

ϕfs

(deg)

|yfs|

ϕfs

Fig.19 Forward transfer admittance and phase as

functions of frequency; typical values.

VDS = 5 V; VG2 =4V.

ID = 15 mA; Tamb =25 °C.

handbook, halfpage

MDB844

10

102

103

10

1

10−1

10−2

yos

(mS)

f (MHz)

bos

gos

Fig.20 Output admittance as a function of

frequency; typical values.

VDS = 5 V; VG2 =4V.

ID = 15 mA; Tamb =25 °C.

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