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BF1211R Datenblatt(PDF) 9 Page - NXP Semiconductors |
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BF1211R Datenblatt(HTML) 9 Page - NXP Semiconductors |
9 / 15 page 2003 Dec 16 9 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1211; BF1211R; BF1211WR handbook, halfpage 102 10 1 10−1 MDB841 10 102 103 yis (mS) f (MHz) gis bis Fig.17 Input admittance as a function of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. handbook, halfpage MDB842 10 102 103 103 102 10 1 |yrs| ( µS) f (MHz) −103 −102 −10 −1 ϕrs (deg) |yrs| ϕrs Fig.18 Reverse transfer admittance and phase as a function of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. handbook, halfpage 102 10 1 MDB843 10 f (MHz) 102 103 |yfs| (mS) −102 −10 −1 ϕfs (deg) |yfs| ϕfs Fig.19 Forward transfer admittance and phase as functions of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. handbook, halfpage MDB844 10 102 103 10 1 10−1 10−2 yos (mS) f (MHz) bos gos Fig.20 Output admittance as a function of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. |
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