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MC100EL01DG Datenblatt(PDF) 4 Page - ON Semiconductor

Teilenummer MC100EL01DG
Bauteilbeschribung  5V ECL 4?륤nput OR/NOR
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC100EL01DG Datenblatt(HTML) 4 Page - ON Semiconductor

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Table 5. 100EL SERIES PECL DC CHARACTERISTICS (VCC = 5.0 V; VEE = 0.0 V (Note 1))
−40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
14
17
14
17
16
20
mA
VOH
Output HIGH Voltage (Note 2)
3915
3995
4120
3975
4045
4120
3975
4050
4120
mV
VOL
Output LOW Voltage (Note 2)
3170
3305
3445
3190
3295
3380
3190
3295
3380
mV
VIH
Input HIGH Voltage
3835
4120
3835
4120
3835
4120
mV
VIL
Input LOW Voltage
3190
3525
3190
3525
3190
3525
mV
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.8 V / −0.5 V.
2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
Table 6. 100EL SERIES NECL DC CHARACTERISTICS (VCC = 0.0 V; VEE = −5.0 V (Note 1))
−40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
14
17
14
17
16
20
mA
VOH
Output HIGH Voltage (Note 2)
−1085 −1005
−880
−1025
−955
−880
−1025
−955
−880
mV
VOL
Output LOW Voltage (Note 2)
−1830 −1695 −1555 −1810 −1705 −1620 −1810 −1705 −1620
mV
VIH
Input HIGH Voltage
−1165
−880
−1165
−880
−1165
−880
mV
VIL
Input LOW Voltage
−1810
−1475 −1810
−1475 −1810
−1475
mV
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.8 V / −0.5 V.
2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
Table 7. AC CHARACTERISTICS (VCC = 5.0 V; VEE = 0.0 V or VCC = 0.0 V; VEE = −5.0 V (Note 1))
−40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
fMAX
Maximum Toggle Frequency
TBD
TBD
TBD
GHz
tPLH
tPHL
Propagation Delay to Output
70
220
370
130
230
330
150
250
350
ps
tJITTER
Cycle-to-Cycle Jitter
TBD
TBD
TBD
ps
tr
tf
Output Rise/Fall Times Q (20% − 80%)
100
225
350
100
225
350
100
225
350
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. 10 Series: VEE can vary +0.25 V / −0.5 V.
100 Series: VEE can vary +0.8 V / −0.5 V.


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ON Semiconductor
MC100EL01DG ONSEMI-MC100EL01DG Datasheet
144Kb / 9P
   5V ECL 4-Input OR/NOR
December, 2006 ??Rev. 5
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