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BD107 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BD107
Bauteilbeschribung  isc Silicon NPN Power Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD107 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
BD107
DESCRIPTION
·
Continuous Collector Current -IC= 2.5A
·
Power Dissipation-PD=12W @TC= 25℃
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Designed for driver and output stages and high
power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
13
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
65
V
VCEO
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2.5
A
PC
Collector Power Dissipation@TC=25℃
12
W
TJ
Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175


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