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Datenblatt-Suchmaschine für elektronische Bauteile |
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BD107 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD107 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BD107 DESCRIPTION · Continuous Collector Current -IC= 2.5A · Power Dissipation-PD=12W @TC= 25℃ · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for driver and output stages and high power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 13 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 65 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A PC Collector Power Dissipation@TC=25℃ 12 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ |
Ähnliche Teilenummer - BD107 |
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Ähnliche Beschreibung - BD107 |
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