Datenblatt-Suchmaschine für elektronische Bauteile |
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BD245D Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD245D Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BD245D DESCRIPTION · Excellent Safe Operating Area · DC Current Gain- : hFE>40@IC = 1A · Collector-Emitter Saturation Voltage- : VCE(sat)= 1 V(Max)@ IC = 3A · Designed for Complementary Use with the BD246D APPLICATIONS · Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 80 W Tj Junction Tmperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 42 ℃ /W |
Ähnliche Teilenummer - BD245D |
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Ähnliche Beschreibung - BD245D |
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