Datenblatt-Suchmaschine für elektronische Bauteile |
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CSD13380F3T Datenblatt(PDF) 3 Page - Texas Instruments |
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CSD13380F3T Datenblatt(HTML) 3 Page - Texas Instruments |
3 / 14 page 3 CSD13380F3 www.ti.com SLPS593 – OCTOBER 2016 Product Folder Links: CSD13380F3 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 μA 12 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 9.6 V 50 nA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 8 V 25 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 μA 0.55 0.85 1.30 V RDS(on) Drain-to-source on resistance VGS = 1.8 V, IDS = 0.1 A 96 135 m Ω VGS = 2.5 V, IDS = 0.4 A 73 92 VGS = 4.5 V, IDS = 0.4 A 63 76 gfs Transconductance VDS = 1.2 V, IDS = 0.4 A 4.3 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = 6 V, ƒ = 1 MHz 120 156 pF Coss Output capacitance 81 105 pF Crss Reverse transfer capacitance 9.6 12.5 pF RG Series gate resistance 16 Ω Qg Gate charge total (4.5 V) VDS = 6 V, IDS = 0.4 A 0.91 1.2 nC Qgd Gate charge gate-to-drain 0.15 nC Qgs Gate charge gate-to-source 0.19 nC Qg(th) Gate charge at Vth 0.15 nC Qoss Output charge VDS = 6 V, VGS = 0 V 0.81 nC td(on) Turnon delay time VDS = 6 V, VGS = 4.5 V, IDS = 0.4 A, RG = 2 Ω 4 ns tr Rise time 4 ns td(off) Turnoff delay time 11 ns tf Fall time 3 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 0.4 A, VGS = 0 V 0.71 1 V Qrr Reverse recovery charge VDS= 6 V, IF = 0.4 A, di/dt = 100 A/μs 2.1 nC trr Reverse recovery time 8 ns (1) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. (2) Device mounted on FR4 material with minimum Cu mounting area. 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJA Junction-to-ambient thermal resistance(1) 90 °C/W Junction-to-ambient thermal resistance(2) 255 |
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