Datenblatt-Suchmaschine für elektronische Bauteile |
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CSD17585F5T Datenblatt(PDF) 1 Page - Texas Instruments |
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CSD17585F5T Datenblatt(HTML) 1 Page - Texas Instruments |
1 / 14 page D G S 0.77 mm 0.35 mm 1.53 mm Product Folder Sample & Buy Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD17585F5 SLPS610 – OCTOBER 2016 CSD17585F5 30-V N-Channel FemtoFET™ MOSFET 1 1 Features 1 • Low On Resistance • Ultra-Low Qg and Qgd • Ultra-Small Footprint – 1.53 mm × 0.77 mm • Low Profile – 0.35-mm Height • Integrated ESD Protection Diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for Industrial Load Switch Applications • Optimized for General Purpose Switching Applications 3 Description This 30-V, 22-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. . . . . . . Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 30 V Qg Gate Charge Total (4.5 V) 1.9 nC Qgd Gate Charge Gate-to-Drain 0.39 nC RDS(on) Drain-to-Source On Resistance VGS = 4.5 V 26 m Ω VGS = 10 V 22 VGS(th) Threshold Voltage 1.3 V . Device Information(1) DEVICE QTY MEDIA PACKAGE SHIP CSD17585F5 3000 7-Inch Reel Femto 1.53-mm × 0.77-mm SMD Lead Less Tape and Reel CSD17585F5T 250 (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage +20 V ID Continuous Drain Current(1) 3.6 A Continuous Drain Current(2) 5.9 IDM Pulsed Drain Current(1)(3) 34 A PD Power Dissipation(1) 0.5 W Power Dissipation(2) 1.4 V(ESD) Human-Body Model (HBM) 4 kV Charged-Device Model (CDM) 2 TJ, Tstg Operating Junction, Storage Temperature –55 to 150 °C (1) Min Cu, typical RθJA = 245°C/W. (2) Max Cu, typical RθJA = 90°C/W. (3) Pulse duration ≤ 100 μs, duty cycle ≤ 1%. Typical Part Dimensions Top View |
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