Datenblatt-Suchmaschine für elektronische Bauteile |
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MTB011N10RQ8-0-T3-G Datenblatt(PDF) 5 Page - Cystech Electonics Corp. |
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MTB011N10RQ8-0-T3-G Datenblatt(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 5/9 MTB011N10RQ8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0 5 10 15 20 25 30 35 40 45 50 VDS, Drain-Source Voltage(V) C oss Ciss Crss f=1MHz Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250 μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) Pulsed Ta=25°C VDS=15V VDS=10V Gate Charge Characteristics 0 2 4 6 8 10 0 1020 30 4050 60 7080 Qg, Total Gate Charge(nC) ID=11.5A VDS=80V VDS=20V VDS=50V Maximum Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) DC 100ms 1s 10ms 100 μs 1ms RDS(ON) Limited TA=25°C, Tj=150°C VGS=10V,RθJA=40°C/W Single Pulse Maximum Drain Current vs Junction Temperature 0 2 4 6 8 10 12 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C,RθJA=40°C/W,VGS=10V |
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