Datenblatt-Suchmaschine für elektronische Bauteile |
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MTB013N10RJ3 Datenblatt(PDF) 1 Page - Cystech Electonics Corp. |
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MTB013N10RJ3 Datenblatt(HTML) 1 Page - Cystech Electonics Corp. |
1 / 9 page CYStech Electronics Corp. Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. : 1/ 9 MTB013N10RJ3 CYStek Product Specification N-Channel Enhancement Mode Power MOSFET MTB013N10RJ3 BVDSS 100V ID@VGS=10V, TC=25°C 42A ID@VGS=10V, TA=25°C 9A RDS(ON)@VGS=10V, ID=15A 12.5mΩ(typ) Features RDS(ON)@VGS=4.5V, ID=10A 14.5 mΩ(typ) • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package Symbol Outline TO-252(DPAK) Ordering Information Device Package Shipping MTB013N10RJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel MTB013N10RJ3 G D S G:Gate D:Drain S:Source Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name |
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Ähnliche Beschreibung - MTB013N10RJ3 |
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