Datenblatt-Suchmaschine für elektronische Bauteile |
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MTB030N10RQ8-0-T3-G Datenblatt(PDF) 3 Page - Cystech Electonics Corp. |
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MTB030N10RQ8-0-T3-G Datenblatt(HTML) 3 Page - Cystech Electonics Corp. |
3 / 9 page CYStech Electronics Corp. Spec. No. : C053Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 3/9 MTB030N10RQ8 CYStek Product Specification Characteristics (Cont. TC=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Dynamic td(ON) *1, 2 - 11.6 - tr *1, 2 - 17.4 - td(OFF) *1, 2 - 42.6 - tf *1, 2 - 5.6 - ns VDS=50V, ID=10A, VGS=10V, RGS=1Ω Rg - 1.8 - Ω f=1MHz Source-Drain Diode Ratings and Characteristics IS *1 - - 6.2 ISM *3 - - 25 A VSD *1 - 0.84 1.2 V IS=10A, VGS=0V trr - 25.6 - ns Qrr - 32 - nC IF=10A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint |
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