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BD2270HFV-GTR Datenblatt(PDF) 1 Page - Rohm |
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BD2270HFV-GTR Datenblatt(HTML) 1 Page - Rohm |
1 / 22 page Controller ICs for High Side NMOSFET BD2270HFV General Description BD2270HFV is a gate driver for high side N-Channel MOSFET that comes with a discharge circuit for the output capacitive load. An internal charge pump enables the IC to drive the gate of an external high side NMOSFET without using any external parts. The power up sequence is controlled by a comparator with hysteresis function. The space saving HVSOF5 package is used. Features ■ Built-in Charge Pump Circuit Drives the Gate of the External N-Channel Power MOSFET ■ Built-in Discharge Circuit for Output Charge ■ Soft Start Circuit ■ Built-in Comparator with Hysteresis Function at Control Block Input ■ Possible to drive N-channel power MOSFET Applications PCs PC Peripheral Devices Digital Consumer Electronics Key Specifications Input Voltage Range: 2.7V to 5.5V GATE Rise Time (CGATE= 500pF): 130μs (Typ) GATE Output Voltage(VCC= 5V): 13.5V(Typ) Operating Current: 50μA(Typ) Standby Current: 5μA (Typ) Operating Temperature Range: -25°C to +85°C Package W(Typ) D(Typ) H (Max) Typical Application Circuit Lineup GATE Output Voltage(VCC= 5V) Package Orderable Part Number Min Typ Max 10V 13.5V 15V HVSOF5 Reel of 3000 BD2270HFV-TR BD2270HFV-GTR VCC DISC GND GATE AEN BD2270HFV 3.3V 3.3V Load ON/OFF VIN_SWITCH VOUT_SWITCH HVSOF5 1.60mm x 1.60mm x 0.60mm ○ Product structure:Silicon monolithic integrated circuit ○This product has not designed protection against radioactive rays 1/18 www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 TSZ02201-0E3E0H300230-1-2 21.Aug.2014 Rev.003 Datasheet |
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