Datenblatt-Suchmaschine für elektronische Bauteile |
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2N3185 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N3185 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2N3185 DESCRIPTION · Excellent Safe Operating Area · With TO-3 package · Low collector saturation voltage · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 75 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+200 ℃ |
Ähnliche Teilenummer - 2N3185 |
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Ähnliche Beschreibung - 2N3185 |
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