SI4554DY datasheet(8/14 Pages) VISHAY

Teilenummer	SI4554DY

Bauteilbeschribung	N- and P-Channel 40 V (D-S) MOSFET

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Document Number: 63660

S11-2527-Rev. A, 26-Dec-11

Vishay Siliconix

Si4554DY

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

8

16

24

32

40

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10 V thru 4V

VGS =3V

VGS =2V

V

DS - Drain-to-Source Voltage (V)

0.015

0.02

0.025

0.03

0.035

0

10203040

I

D - Drain Current (A)

V

GS = 8 V

V

GS = 4.5 V

V

GS = 10 V

0

2

4

6

8

10

0

9

18

27

36

45

ID =10A

VDS =20V

VDS =30V

VDS =10V

Q

g - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0

1

234

5

TC = 125 °C

TC = 25 °C

TC = - 55 °C

V

GS - Gate-to-Source Voltage (V)

Crss

0

620

1240

1860

2480

3100

0

8

16

24

32

40

Ciss

Coss

V

DS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

ID =8A

VGS =4.5 V

VGS =10V

T

J - Junction Temperature (°C)

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