BC818 datasheet(1/2 Pages) DGNJDZ

Teilenummer	BC818

Bauteilbeschribung	NPN Silicon Epitaxial Planar Transistors

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Hersteller	DGNJDZ [Nanjing International Group Co]

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BC817 / BC818

NPN Silicon Epitaxial Planar Transistors

for switching, AF driver and amplifier application,

These transistors are subdivided into three groups

–16, -25, -40 according to their current gain.

As complementary types, the PNP transistors

BC807 and BC808 are recommended.

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Collector Base Voltage

BC817

BC818

VCBO

50

30

V

Collector Emitter Voltage

BC817

BC818

VCEO

45

25

V

Emitter Base Voltage

VEBO

5

V

Collector Current

IC

500

mA

Power Dissipation

Ptot

200

mW

Thermal Resistance , Junction to Ambient

RθJA

500

K/W

Junction Temperature

TJ

150

O

C

Storage Temperature Range

Ts

- 55 to + 150

O

C

Electrical Characteristics at Ta = 25 OC

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE = 1 V, IC = 100 mA

Current Gain Group

at VCE = 1 V, IC = 500 mA

-16

-25

-40

hFE

100

160

250

40

-

250

400

600

-

Collector Base Cutoff Current

at VCB = 20 V

ICBO

-

100

nA

Emitter-Base Cutoff Current

at VEB = 5 V

IEBO

-

100

nA

Collector Saturation Voltage

at IC = 500 mA, IB = 50 mA

VCEsat

-

0.7

V

Base-Emitter Voltage

at IC = 500 mA, VCE = 1 V

VBE(on)

-

1.2

V

Gain -Bandwidth Product

at VCE = 5 V, IC = 10 mA, f = 50 MHz

fT

100

-

MHz

Collector-Base Capacitance

at VCB = 10 V, f = 1 MHz

CCBO

-

5

-

pF

SOT-23 Plastic Package

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