2010-04-06

BF888

1

1

2

3

4

High Performance Bipolar NPN RF Transistor

• High transducer gain of typ. 14 dB @ 25 mA,6 GHz

• Low minimum noise figure of typ. 0.85 dB @ 6GHz

• High output compression of typ. 11 dBm @ 25 mA

• Pb-free (RoHS compliant) package

• For a wide range of non-automotive applications

- 2nd and 3rd LNA stage and mixer stage in LNB

- 5.8 GHz analog/digital cordless phone

- Satellite radio SDARS

- WLAN, WiMAX, UWB

ESD

(Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BF888

RYs

1=B

2=E

3=C

4=E

-

-

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

4.0

3.5

V

Collector-emitter voltage

13

Collector-base voltage

13

Emitter-base voltage

1.2

Collector current

30

mA

Base current

3

160

mW

Junction temperature

150

°C

Ambient temperature

-55 ... 150

Storage temperature

-55 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

≤ 380

K/W