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SI1028X Datenblatt(PDF) 2 Page - Vishay Siliconix

Teilenummer SI1028X
Bauteilbeschribung  Dual N-Channel 30 V (D-S) MOSFET
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Document Number: 63862
S12-1956-Rev. B, 13-Aug-12
Vishay Siliconix
Si1028X
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
V
DS/TJ
ID = 250 µA
33
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 2.8
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
12.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 20
µA
VDS = 0 V, VGS = ± 4.5 V
± 1
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 85 °C
10
On-State Drain Currenta
ID(on)
VDS =  5 V, VGS = 10 V
1A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 0.5 A
0.540
0.650
VGS = 4.5 V, ID = 0.2 A
0.640
0.770
Forward Transconductance
gfs
VDS = 10 V, ID = 0.5 A
1S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
16
pF
Output Capacitance
Coss
8
Reverse Transfer Capacitance
Crss
4
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 0.5 A
12
nC
VDS = 15 V, VGS = 4.5 V, ID = 0.5 A
0.5
1
Gate-Source Charge
Qgs
0.15
Gate-Drain Charge
Qgd
0.20
Gate Resistance
Rg
f = 1 MHz
50
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 37.5 
ID  0.38 A, VGEN = 4.5 V, Rg = 1 
816
ns
Rise Time
tr
10
20
Turn-Off Delay Time
td(off)
918
Fall Time
tf
816
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 37.5 
ID  0.38 A, VGEN = 10 V, Rg = 1 
24
Rise Time
tr
918
Turn-Off Delay Time
td(off)
714
Fall Time
tf
816
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
1A
Body Diode Voltage
VSD
IS = 0.38 A
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 0.38 A, dI/dt = 100 A/µs
918
ns
Body Diode Reverse Recovery Charge
Qrr
24
nC
Reverse Recovery Fall Time
ta
5
ns
Reverse Recovery Rise Time
tb
4


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