SI4922BDY datasheet(3/9 Pages) VISHAY

Teilenummer	SI4922BDY

Bauteilbeschribung	Dual N-Channel 30-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Document Number: 74459

S09-0704-Rev. B, 27-Apr-09

www.vishay.com

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Vishay Siliconix

Si4922BDY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

8

16

24

32

40

0.0

0.5

1.0

1.5

2.0

2.5

VDS - Drain-to-Source Voltage (V)

VGS = 10 V thru 3 V

2 V

0

8

16

24

32

40

ID - Drain Current (A)

0.010

0.014

0.018

0.022

0.026

0.030

VGS = 2.5 V

VGS = 10 V

VGS = 4.5 V

0

2

4

6

8

10

09

18

27

36

45

Qg - Total Gate Charge (nC)

ID = 5 A

VDS = 15 V

VDS = 20 V

VDS = 10 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

VGS - Gate-to-Source Voltage (V)

0.0

0.4

0.8

1.2

1.6

2.0

0.0

0.6

1.2

1.8

2.4

3.0

TJ = 25 °C

TJ = - 55 °C

TJ = 125 °C

Crss

VDS - Drain-to-Source Voltage (V)

0

600

1200

1800

2400

3000

06

12

18

24

30

Coss

Ciss

TJ - Junction Temperature (°C)

0.7

0.9

1.1

1.3

1.5

1.7

- 50

- 25

0

25

50

75

100

125

150

ID = 5 A

VGS = 10 V

VGS = 4.5 V

Ähnliche Beschreibung - SI4922BDY

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