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SIZ914DT Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SIZ914DT Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 14 page www.vishay.com 4 Document Number: 62905 S13-2181-Rev. A, 14-Oct-13 Vishay Siliconix SiZ914DT This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 20 40 60 80 0 0.5 1 1.5 2 V DS - Drain-to-Source Voltage (V) V GS = 10 V thru 5 V V GS = 3 V V GS = 4 V 0.0000 0.0030 0.0060 0.0090 0.0120 0.0150 0 14 28 42 56 70 I D - Drain Current (A) V GS = 4.5 V V GS = 10 V 0 2 4 6 8 10 0 5 10 15 20 Q g - Total Gate Charge (nC) V DS = 24 V V DS = 8 V V DS = 15 V I D = 19 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 0 0.6 1.2 1.8 2.4 3 V GS - Gate-to-Source Voltage (V) T C = 25 °C T C = 125 °C T C = - 55 °C 0 270 540 810 1080 1350 0 5 10 15 20 V DS - Drain-to-Source Voltage (V) C iss C oss C rss 0.7 0.95 1.2 1.45 1.7 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) I D = 19 A V GS = 10 V V GS = 4.5 V |
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