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STPSC20065-Y Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer STPSC20065-Y
Bauteilbeschribung  Automotive 650 V power Schottky silicon carbide diode
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Characteristics
STPSC20065-Y
4/11
DocID029260 Rev 1
1.2
Characteristics (curves)
Figure 1: Forward voltage drop versus forward
current (typical values)
Figure 2: Reverse leakage current versus reverse
voltage applied (typical values)
Figure 3: Peak forward current versus case
temperature
Figure 4: Junction capacitance versus reverse
voltage applied (typical values)
Figure 5: Relative variation of thermal impedance
junction to case versus pulse duration
Figure 6: Non-repetitive peak surge forward
current versus pulse duration (sinusoidal
waveform)
0
5
10
15
20
25
30
35
40
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VF(V)
IF(A)
T
a=150 °C
T
a=175 °C
Pulse test : t
p=500 µs
T
a=25 °C
T
a=100 °C
T
a=-40 °C
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0
50
100 150
200
250
300 350
400
450
500 550
600
650
VR(V)
IR(µA)
T
j=25 °C
T
j=150 °C
T
j=175 °C
0
20
40
60
80
100
120
140
0
25
50
75
100
125
150
175
TC(°C)
IM(A)
T
δ=tp/T
tp
δ=0.1
δ=0.3
δ=0.5
δ=1
δ=0.7
0
200
400
600
800
1000
1200
1400
0.1
1.0
10.0
100.0
1000.0
VR(V)
Cj(pF)
F=1 MHz
V
O S C =30 mVRMS
T
j=25 °C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
tp(s)
Zth(j-c) /Rth(j-c)
Single pulse
1.E+01
1.E+02
1.E+03
1.E-05
1.E-04
1.E-03
1.E-02
tp(s)
IFSM(A)
T
a=25 °C
T
a=125 °C


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