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TSB611 Datenblatt(PDF) 6 Page - STMicroelectronics |
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TSB611 Datenblatt(HTML) 6 Page - STMicroelectronics |
6 / 24 page Electrical characteristics TSB611 6/24 DocID028074 Rev 1 Table 4: Electrical characteristics at Vcc+ = 12 V with Vcc- = 0 V, Vicm = Vcc/2, Tamb = 25 °C, and RL = 10 kΩ connected to Vcc/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit DC performance Vio Input offset voltage -1 1 mV -40 °C < T< 125 °C -1.6 1.6 ΔVio/ΔT Input offset voltage drift -40 °C < T< 125 °C 1.6 6 μV/°C Iio Input offset current 1 5 nA -40 °C < T< 125 °C 15 Iib Input bias current 5 10 -40 °C < T< 125 °C 15 CMR Common mode rejection ratio: 20 log (ΔVicm/ΔVio) Vicm = 0 V to Vcc+ - 1 V, Vout = Vcc/2 95 126 dB -40 °C < T< 12 5°C 90 SVR Supply voltage rejection ratio: 20 log (ΔVcc/ΔVio) Vcc = 2.8 to 12 V 95 124 -40 °C < T< 125 °C 90 Avd Large signal voltage gain Vout = 0.5 V to (Vcc+ - 0.5 V) 105 115 -40 °C < T< 125 °C 100 VOH High level output voltage drop from Vcc+ 37 60 mV -40 °C < T< 125 °C 65 VOL Low level output voltage 56 65 -40 °C < T< 125 °C 75 Iout Isink Vout = Vcc 24 35 mA -40 °C < T< 125 °C 10 Isource Vout = 0 V 28 40 -40 °C < T< 125 °C 10 ICC Supply current (per channel) No load, Vout = Vcc/2 97 115 µA -40 °C < T< 125 °C 130 AC performance GBP Gain bandwidth product RL = 10 kΩ, CL = 100 pF 510 kHz Fu Unity gain frequency RL = 10 kΩ, CL = 100 pF 460 Фm Phase margin RL = 10 kΩ, CL = 100 pF 60 Degrees Gm Gain margin RL = 10 kΩ, CL = 100 pF 18 dB SR+ Positive slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 0.13 0.19 V/μs SR- Negative slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 0.11 0.15 en Equivalent input noise voltage f = 1 kHz 31 nV/√Hz f = 10 kHz 30 THD+N Total harmonic distortion + noise fin = 1 kHz, Gain = 1, RL = 100 kΩ, Vicm = (Vcc - 1 V)/2, BW = 22 kHz, Vout = 2 Vpp 0.004 % |
Ähnliche Teilenummer - TSB611 |
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Ähnliche Beschreibung - TSB611 |
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