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2SD1289 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer 2SD1289
Bauteilbeschribung  isc Silicon NPN Power Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1289 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2SD1289
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCE(sat)NOTE Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
0.65
1.5
V
VBE(sat)NOTE Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
1.25
2.0
V
ICBO
Collector Base Cutoff Current
VCB=120V; IE= 0
50
uA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
50
uA
hFE -1NOTE
DC Current Gain
IC= 50mA ; VCE= 5V
40
hFE -2NOTE
DC Current Gain
IC= 1A ; VCE= 5V
60
320
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
60
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V,ftest= 1MHz
120
pF
NOTE:Pulse test PW≤350us,duty cycle ≤2%
hFE1 Classifications
R
Q
P
60-120
100-200 160-320


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