Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF640N Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF640N Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF640N DESCRIPTION · Drain Current –ID= 18A@ TC=25℃ · Drain Source Voltage- : VDSS= 200V(Min) · Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) · Fast Switching Speed · Low Drive Requirement APPLICATIONS · Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 18 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 62 ℃ /W |
Ähnliche Teilenummer - IRF640N |
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Ähnliche Beschreibung - IRF640N |
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