Datenblatt-Suchmaschine für elektronische Bauteile |
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LM363 Datenblatt(PDF) 4 Page - National Semiconductor (TI) |
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LM363 Datenblatt(HTML) 4 Page - National Semiconductor (TI) |
4 / 22 page Typical Performance Characteristics TAe25 C Parameter Fixed Gain and Programmable Units 1000500 100 10 Input Voltage Noise rms 1 kHz 12 18 90 nV SHz Input Voltage Noise (Note 6) 04 15 10 m Vp-p Input Current Noise rms 1 kHz 02 02 02 pA SHz Input Current Noise (Note 6) 40 40 40 pAp-p Bandwidth 30 100 200 kHz Slew Rate 1 036 024 V ms Settling Time 01% of 10V 70 25 20 m s Offset Voltage Warm-Up Drift (Note 7) 5 15 50 m V Offset Voltage Stability (Note 8) 5 10 100 m V Gain Stability (Note 8) 001 0005 005 % Note 6 Measured for 100 seconds in a 001 Hz to 10 Hz bandwidth Note 7 Measured for 5 minutes in still air Va e15V Vbeb15V Warm-up drift is proportionally reduced at lower supply voltages Voltage Limit Common-Mode Input Voltage Supply Current vs Supply Temperature Input Bias Current vs Supplies Output Swing Referred to Temperature Supply Current vs Temperature Input Offset Current vs TLH5609 – 3 4 |
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Ähnliche Beschreibung - LM363 |
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