Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1429 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1429 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD1429 DESCRIPTION · High Breakdown Voltage- : VCBO= 1500V (Min) · High Switching Speed · Low Saturation Voltage · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 2.5 A IE Emitter Current 2.5 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Ähnliche Teilenummer - 2SD1429 |
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Ähnliche Beschreibung - 2SD1429 |
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