2SD1599 datasheet(1/2 Pages) ISC

Teilenummer	2SD1599

Bauteilbeschribung	isc Silicon NPN Darlington Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

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isc Silicon NPN Darlington Power Transistor

2SD1599

DESCRIPTION

·

High DC Current Gain-

: hFE = 1000(Min)@ IC= 2A

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 80V(Min)

·

Low Collector-Emitter Saturation Voltage-

: VCE(sat) = 2.0V(Max)@ IC= 3A

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for general purpose amplifier and low speed

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

4

A

ICM

Collector Current-Peak

8

A

PC

Collector Power Dissipation

TC=25℃

40

W

Collector Power Dissipation

Ta=25℃

2

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

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