Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1599 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1599 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2SD1599 DESCRIPTION · High DC Current Gain- : hFE = 1000(Min)@ IC= 2A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) · Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A PC Collector Power Dissipation TC=25℃ 40 W Collector Power Dissipation Ta=25℃ 2 Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
Ähnliche Teilenummer - 2SD1599 |
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Ähnliche Beschreibung - 2SD1599 |
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