Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD339 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD339 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD339 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 90 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 8 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.75A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7.5A; IB= 0.75A 1.8 V ICBO Collector Cutoff Current VCB= 90V; VEB= 0 50 uA ICEO Collector Cutoff Current VCE= 90V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 uA hFE-1 DC Current Gain IC= 1A ; VCE= 2V 50 200 hFE-2 DC Current Gain IC= 4A ; VCE= 2V 30 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 5 MHz |
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Ähnliche Beschreibung - 2SD339 |
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