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CS2000-CP Datenblatt(PDF) 7 Page - Cirrus Logic

Teilenummer CS2000-CP
Bauteilbeschribung  Fractional-N Clock Synthesizer & Clock Multiplier
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Hersteller  CIRRUS [Cirrus Logic]
Direct Link  http://www.cirrus.com
Logo CIRRUS - Cirrus Logic

CS2000-CP Datenblatt(HTML) 7 Page - Cirrus Logic

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CS2000-CP
DS761F3
7
3. CHARACTERISTICS AND SPECIFICATIONS
RECOMMENDED OPERATING CONDITIONS
GND = 0 V; all voltages with respect to ground. (Note 1)
Notes: 1. Device functionality is not guaranteed or implied outside of these limits. Operation outside of these limits
may adversely affect device reliability.
ABSOLUTE MAXIMUM RATINGS
GND = 0 V; all voltages with respect to ground.
CAUTION: Stresses beyond “Absolute Maximum Ratings” levels may cause permanent damage to the device.
These levels are stress ratings only, and functional operation of the device at these or any other condi-
tions beyond those indicated in Section 3. on page 7 is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Notes: 2. The maximum over/under voltage is limited by the input current except on the power supply pin.
DC ELECTRICAL CHARACTERISTICS
Test Conditions (unless otherwise specified): VD = 3.1 V to 3.5 V; TA = -10°C to +70°C (Commercial Grade);
TA = -40°C to +85°C (Automotive-D Grade); TA = -40°C to +105°C (Automotive-E Grade)
Notes: 3. To calculate the additional current consumption due to loading (per output pin), multiply clock output
frequency by load capacitance and power supply voltage. For example, fCLK_OUT (49.152 MHz) * CL
(15 pF) * VD (3.3 V) = 2.4 mA of additional current due to these loading conditions on CLK_OUT.
Parameters
Symbol
Min
Typ
Max
Units
DC Power Supply
VD
3.1
3.3
3.5
V
Ambient Operating Temperature (Power Applied)
Commercial Grade
Automotive-D Grade
Automotive-E Grade
TAC
TAD
TAE
-10
-40
-40
-
-
-
+70
+85
+105
°C
°C
°C
Parameters
Symbol
Min
Max
Units
DC Power Supply
VD
-0.3
6.0
V
Input Current
IIN
-±10
mA
Digital Input Voltage (Note 2)VIN
-0.3
VD + 0.4
V
Ambient Operating Temperature (Power Applied)
TA
-55
125
°C
Storage Temperature
Tstg
-65
150
°C
Parameters
Symbol
Min
Typ
Max
Units
Power Supply Current - Unloaded
(Note 3)ID
-12
18
mA
Power Dissipation - Unloaded
(Note 3)PD
-40
60
mW
Input Leakage Current
IIN
--
±10
µA
Input Capacitance
IC
-8-
pF
High-Level Input Voltage
VIH
70%
-
-
VD
Low-Level Input Voltage
VIL
--
30%
VD
High-Level Output Voltage (IOH = -1.2 mA)
VOH
80%
-
-
VD
Low-Level Output Voltage (IOH = 1.2 mA)
VOL
--
20%
VD


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