2SCR375P5 datasheet(2/9 Pages) ROHM

Teilenummer	2SCR375P5

Bauteilbeschribung	Middle Power Transistor(120V/1.5A)

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Hersteller	ROHM [Rohm]

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2SCR375P5

Datasheet

l

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Values

Unit

Collector-base voltage

VCBO

120

V

Collector-emitter voltage

VCEO

120

V

Emitter-base voltage

VEBO

6

V

Collector current

IC

1.5

A

ICP*1

3.0

A

Power dissipation

PD*2

0.5

W

PD*3

2.0

W

Junction temperature

Tj

150

℃

Range of storage temperature

Tstg

-55 to +150

℃

l

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Collector-base breakdown

voltage

BVCBO

IC = 100μA

120

-

V

Collector-emitter breakdown

voltage

BVCEO

IC = 1mA

120

-

V

Emitter-base breakdown voltage

BVEBO

IE = 100μA

6

-

V

Collector cut-off current

ICBO

VCB = 100V

-

1.0

μA

Emitter cut-off current

IEBO

VEB = 4V

-

1.0

μA

Collector-emitter saturation voltage

VCE(sat) IC = 800mA, IB = 80mA

-

100

300

mV

DC current gain

hFE

VCE = 5V, IC = 200mA

120

-

390

-

Transition frequency

fT

VCE = 10V, IE = -400mA,

f = 100MHz

-

200

-

MHz

Output capacitance

Cob

VCB = 10V, IE = 0A,

f = 1MHz

-

12

-

pF

hFE values are calssified as follows :

rank

Q

R

-

hFE

120-270

180-390

-

*1 Pw=10ms, Single Pulse

*2 Each terminal mounted on a reference land.

*3 Mounted on a ceramic board.(40×40×0.7mm)

www.rohm.com

2/6

20160526 - Rev.002

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