TPC8108 datasheet(4/7 Pages) TOSHIBA

Teilenummer	TPC8108

Bauteilbeschribung	Silicon P Channel MOS Type (U-MOSIII)

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 7 page

TPC8108

2002-03-12

4

ID – VDS

ID – VGS

VDS – VGS

|Yfs| – ID

RDS (ON) – ID

Drain-source voltage VDS (V)

Gate-source voltage VGS (V)

Drain current ID (A)

−2

−3

−4

−5

Common source

Ta

= 25°C

Pulse test

−2.2

VGS = −2 V

0

−20

−30

−40

−50

−10

0

−1

−3

−4

−6

−8

−10

−2.4

−2.6

−2.8

0.3

−0.1

−0.3

−1

−3

−10

−30

−100

1

3

10

30

100

Common source

VDS = −10 V

Pulse test

Ta

= −55°C

100

25

0.3

−0.1

−0.3

−1

−3

−10

−30

−100

1

3

10

30

100

Common source

Ta

= 25°C

Pulse test

−10

VGS = −4 V

0

−0.2

0

−0.4

−0.6

−0.8

−1.0

−4

−8

−12

−16

−20

Common source

Ta

= 25°C

Pulse test

VGS = −2 V

−2.4

−3

−4

−10

−8

−6

−2.2

−2.6

−2.8

−2

−3

−4

−5

Common source

VDS = −10 V

Pulse test

0

−20

−30

−40

−50

−10

0

−1

100

Ta

= −55°C

25

−8

−12

−16

−20

Common source

Ta

= 25°C

Pulse test

0

−0.2

−0.3

−0.4

−0.5

−0.1

0

−4

ID = −11 A

−2.5

−5.5

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