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BCW33LT1G Datenblatt(PDF) 2 Page - ON Semiconductor

Teilenummer BCW33LT1G
Bauteilbeschribung  General Purpose Transistor
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BCW33LT1G Datenblatt(HTML) 2 Page - ON Semiconductor

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BCW33LT1G, SBCW33LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
32
Vdc
Collector − Base Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CBO
32
Vdc
Emitter − Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 32 Vdc, IE = 0)
(VCB = 32 Vdc, IE = 0, TA = 100°C)
ICBO
100
10
nAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
hFE
420
800
Collector − Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
VCE(sat)
0.25
Vdc
Base − Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
0.55
0.70
Vdc
SMALL− SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
4.0
pF
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
10
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+3.0 V
275
CS < 4.0 pF*
10 k
+3.0 V
275
CS < 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2%
+10.9 V
-0.5 V
<1.0 ns
10 < t1 < 500 ms
DUTY CYCLE = 2%
+10.9 V
0
-9.1 V
< 1.0 ns
t1


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