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Si8261ACD-C-IM Datenblatt(PDF) 6 Page - Silicon Laboratories

Teilenummer Si8261ACD-C-IM
Bauteilbeschribung  Rail-to-rail output voltage
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Hersteller  SILABS [Silicon Laboratories]
Direct Link  http://www.silabs.com
Logo SILABS - Silicon Laboratories

Si8261ACD-C-IM Datenblatt(HTML) 6 Page - Silicon Laboratories

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Si826x
6
Rev. 1.3
UVLO Threshold +
(Si826xxBx mode)
VDDUV+
See Figure 12 on page 16.
VDD rising
7.5
8.4
9.4
V
UVLO Threshold –
(Si826xxBx mode)
VDDUV–
See Figure 12 on page 16.
VDD falling
6.9
7.9
8.9
V
UVLO lockout hysteresis
(Si826xxBx mode)
VDDHYS
—500
mV
UVLO Threshold +
(Si826xxCx mode)
VDDUV+
See Figure 13 on page 16.
VDD rising
10.5
12
13.5
V
UVLO Threshold –
(Si826xxCx mode)
VDDUV–
See Figure 13 on page 16.
VDD falling
9.4
10.7
12.2
V
UVLO lockout hysteresis
(Si826xxCx mode)
VDDHYS
—1.3
V
AC Switching Parameters
Input noise filter cut-off pulse
width
tNFC
15
ns
Minimum pulse width
tPMIN
—30
ns
Propagation delay (Low-to-High)
tPLH
CL = 200 pF
20
40
60
ns
Propagation delay (High-to-Low)
tPHL
CL = 200 pF
10
30
50
ns
Pulse Width Distortion
PWD
|tPLH –tPHL|
17
28
ns
Propagation Delay Difference5
PDD
tPHLMAX –tPLHMIN
-1
25
ns
Rise time
tR
CL = 200 pF
5.5
15
ns
Fall time
tF
CL = 200 pF
8.5
20
ns
Device Startup Time
tSTART
—16
30
µs
Common Mode
Transient Immunity
CMTI
Output = low or high
(VCM = 1500 V), (IF > 6mA)
(See Figure 4)
35
50
kV/µs
Table 2. Electrical Characteristics (Continued)1
VDD =15V or 30 V, GND=0V, IF =6mA, TA = –40 to +125 °C; typical specs at 25 °C
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Notes:
1.
See "8.Ordering Guide" on page 23 for more information.
2.
Minimum value of (VDD - GND) decoupling capacitor is 1 µF.
3.
Both VO pins are required to be shorted together for 4.0 A compliance.
4.
When performing this test, it is recommended that the DUT be soldered down to the PCB to reduce parasitic
inductances, which may cause over-stress conditions due to excessive ringing.
5.
Guaranteed by characterization.


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