Datenblatt-Suchmaschine für elektronische Bauteile |
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BC846BPDW1 Datenblatt(PDF) 4 Page - ON Semiconductor |
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BC846BPDW1 Datenblatt(HTML) 4 Page - ON Semiconductor |
4 / 17 page BC846BPDW1, BC847BPDW1, BC848CPDW1 Series www.onsemi.com 4 TYPICAL NPN CHARACTERISTICS − BC846/SBC846 Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1 0.1 0.01 0.001 0 100 200 300 400 500 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.30 Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 VCE = 5 V 150 °C −55 °C 25 °C IC/IB = 20 150 °C −55 °C 25 °C 0.4 0.9 IC/IB = 20 150 °C −55 °C 25 °C VCE = 5 V 150 °C −55 °C 25 °C 0.4 0.7 1.1 Figure 5. Collector Saturation Region IB, BASE CURRENT (mA) Figure 6. Base−Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA) -1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 0.2 2.0 10 200 1.0 TA = 25°C 200 mA 50 mA IC = 10 mA 0.05 0.2 0.5 2.0 5.0 100 mA 20 mA -1.4 -1.8 -2.2 -2.6 -3.0 0.5 5.0 20 50 100 -55 °C to 125°C qVB for VBE |
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