Datenblatt-Suchmaschine für elektronische Bauteile |
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BC847BPDW1 Datenblatt(PDF) 10 Page - ON Semiconductor |
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BC847BPDW1 Datenblatt(HTML) 10 Page - ON Semiconductor |
10 / 17 page BC846BPDW1, BC847BPDW1, BC848CPDW1 Series www.onsemi.com 10 TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES Figure 25. DC Current Gain vs. Collector Current Figure 26. Collector Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1 0.1 0.01 0.001 0 100 200 300 400 500 0.1 0.01 0.001 0.0001 0 0.05 0.10 0.15 0.20 0.25 0.35 Figure 27. Base Emitter Saturation Voltage vs. Collector Current Figure 28. Base Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 VCE = 5 V 150 °C −55 °C 25 °C IC/IB = 20 150 °C −55 °C 25 °C 0.4 0.9 IC/IB = 20 150 °C −55 °C 25 °C VCE = 5 V 150 °C −55 °C 25 °C 0.4 0.7 1.1 0.30 Figure 29. Collector Saturation Region IB, BASE CURRENT (mA) Figure 30. Base−Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA) 1.6 1.2 2.0 2.8 2.4 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 -0.2 -10 -100 -1.0 -55 °C to +125°C IC = -100 mA IC = -20 mA IC = -200 mA IC = -50 mA IC = -10 mA TA = 25°C 1.0 |
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Ähnliche Beschreibung - BC847BPDW1 |
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